BUAF Transistor Datasheet pdf, BUAF Equivalent. Parameters and Characteristics. isc website： isc & iscsemi is registered trademark. 1 isc Silicon NPN Power Transistor. BUAF. DESCRIPTION. ·Collector-Emitter. BUAF STMicroelectronics Bipolar Transistors – BJT NPN Power Transistor datasheet, inventory, & pricing.
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It is recommended that you completely review our Data Sheet s so as to confirm that the Device s meet functionality parameters for your application. Key Features Fully insulated power package U. Media Subscription Media Contacts.
Product is in volume production 0. Product is in volume production. Please contact our sales support for information on specific devices.
Support Center Complete list and gateway to support services and resource pools. Collector Cut off Current.
BU508AF Datasheet PDF
ST Code of Conduct Blog. IoT for Smart Things. The BUAF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. Product is in volume production only to support customers ongoing production. Continental Device India Limited. The product information and the selection guides facilitate selection of the CDIL’s Discrete Semiconductor Device s best suited for application in your product s as per your requirement.
Total Power Dissipation upto T. Max Operating Junction Temperature. Distributor Name Region Stock Min.
BUAF Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
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Getting started with eDesignSuite. Search field Part name Part description. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Product is in volume production Evaluation: No commitment taken to design or produce NRND: Limited Engineering samples available Preview: Collector Emitter Sustaining Voltage. Product is under characterization.
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